Study of the light-induced degradation of tandem α-Si:H/μc-Si:H photovoltaic converters

被引：8

作者：

Emelyanov, V. M. ^{[1
]}

Abramov, A. S. ^{[1
,2
]}

Bobyl, A. V. ^{[1
]}

Gudovskikh, A. S. ^{[3
]}

Orekhov, D. L. ^{[4
]}

Terukov, E. I. ^{[1
,2
]}

Timoshina, N. Kh ^{[1
]}

Chosta, O. I. ^{[1
]}

Shvarts, M. Z. ^{[1
,2
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] AF Ioffe Phys Tech Inst, OOO Res & Design Ctr Thin Film Technol Energet, St Petersburg 194064, Russia

[3] Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg Acad Univ, St Petersburg 194021, Russia

[4] OOO Hevel, Moscow 123022, Russia

来源：

SEMICONDUCTORS | 2013年 / 47卷 / 05期

关键词：

HYDROGENATED AMORPHOUS-SILICON; COLLISION MODEL; DANGLING BONDS; FLOATING BONDS; ALLOY-FILMS; DEFECTS; METASTABILITY; CREATION;

D O I：

10.1134/S1063782613050102

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The photo-induced degradation of tandem alpha-Si:H/mu c-Si:H photovoltaic converters with an initial efficiency of 10.4% under light flux densities of 1 and 10 kW m(-2) (AM1.5G) is studied. It is shown that the stabilized state is reached after 500 h of exposure to the standard light-flux density and after 300 min at a flux 10 times higher in density. In both cases, the efficiency decreases by 1.2-1.4 abs. %. The experimentally measured spectral and current-voltage characteristics of the photovoltaic converters are used to determine the nonequilibrium carrier lifetimes and to calculate variation dependences of the dangling-bond concentration in i-alpha-Si:H and i-mu c-Si:H layers. The dependences are approximated in terms of the floating-bond model. The calculated dangling-bond concentrations after various exposure times are used to simulate the dependences of the photovoltaic-converter parameters on light exposure. The results obtained show good coincidence between the simulated degradation rates of the current and efficiency of a tandem photovoltaic cell and the experimental data.

引用

页码：679 / 685

页数：7

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