Scaling in the quantum Hall effect regime in n-InGaAs/GaAs nanostructures

被引：6

作者：

Arapov, Yu. G. ^{[1
]}

Gudina, S. V. ^{[1
]}

Klepikova, A. S. ^{[1
]}

Neverov, V. N. ^{[1
]}

Novokshonov, S. G. ^{[1
]}

Kharus, G. I. ^{[1
]}

Shelushinina, N. G. ^{[1
]}

Yakunin, M. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Met Phys, Ural Branch, Ekaterinburg 620041, Russia

来源：

JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS | 2013年 / 117卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

ELECTRON-ELECTRON INTERACTIONS; 2; DIMENSIONS; WELLS; TRANSITION; MAGNETOTRANSPORT; UNIVERSALITY; DELOCALIZATION; CONDUCTANCE; RESISTANCE; SCATTERING;

D O I：

10.1134/S1063776113080116

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The longitudinal rho (xx) (B) and Hall rho (xy) (B) magnetoresistances are investigated experimentally in the integer quantum Hall effect (QHE) regime in n-InGaAs/GaAs double quantum well nanostructures in the range of magnetic fields B = (0-16) T and temperatures T = (0.05-70) K before and after IR illumination. The results are evaluated within the scaling hypothesis with regard to electron-electron interaction.

引用

页码：144 / 152

页数：9

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