Homo and hetero epitaxy of Germanium using isobutylgermane

被引：14

作者：

Attolini, G. ^{[1
]}

Bosi, M. ^{[1
]}

Musayeva, N. ^{[1
]}

Peosi, C. ^{[1
]}

Ferrari, C. ^{[1
]}

Arumainathan, S. ^{[1
]}

Timo, G. ^{[2
]}

机构：

[1] CNR IMEM Inst, I-43010 Parma, Italy

[2] CESI Ric SPA, I-20134 Milan, Italy

来源：

THIN SOLID FILMS | 2008年 / 517卷 / 01期

关键词：

MOVPE; Germanium; surfactant;

D O I：

10.1016/j.tsf.2008.08.137

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nominally undoped Ge epitaxial layers were deposited on Ge and GaAs substrates by means of Metal-Organic Vapor Phase (MOVPE) using a novel Germanium source, isobutylgermane (iBuGe), by Rohm and Haas Electronic Materials LLC (USA). High Resolution X-ray Diffraction, Atomic Force Microscopy and Raman spectroscopy were combined to characterize the layers. Ge layers were deposited using AsH3 as a surfactant and several growth procedures were tested. The use of arsine reduced the growth rate and also significantly improved the epitaxial quality and surface roughness. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：404 / 406

页数：3

共 7 条

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