Fabrication of CuInSe2 thin film solar cell with selenization of double layered precursors from Cu2Se and In2Se3 binary

被引：5

作者：

Jeong, Chaehwan ^{[1
]}

Kim, Jin Hyeok ^{[2
]}

机构：

[1] Korea Inst Ind Technol, Appl Opt & Energy Res Grp, Kwangju 500480, South Korea

[2] Chonnam Natl Univ, Dept Mat Sci & Engn, Kwangju 500757, South Korea

来源：

THIN SOLID FILMS | 2014年 / 550卷

关键词：

Solar cell; CuInSe2; CIS; Sputtering; Chalcopyrite; Thin films; Selenization; RTP; GROWTH; EFFICIENCY;

D O I：

10.1016/j.tsf.2013.10.113

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CuInSe2 (CIS) films on Mo/soda-lime glass were prepared by selenization of sputtered precursors from Cu2Se and In2Se3 binary targets. Cu-In-Se precursors were sequentially sputtered with double-layered structure of both Cu2Se/In2Se3 and In2Se3/Cu2Se. The structural, compositional and electrical properties of annealed Cu-In-Se precursors were investigated for solar cell applications. Better adhesion between CIS and Mo back contact was observed in the double-layered structure of Cu2Se/In2Se3 at all working pressures. Less MoSe2 phase on both structures was generated at a lower working pressure of 0.67 Pa. A CIS solar cell with Al/Al-doped ZnO/i-ZnO/CdS/CIS (900 nm, Cu2Se/In2Se3 at 0.67 Pa)/Mo/soda-lime glass was continuously fabricated, and its conversion efficiency was 4.6%, with 346 mV of open circuit voltage, 30.5 mA/cm(2) of short circuit current density and 43.5% fill factor. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：660 / 664

页数：5

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