High-Mobility Sm-Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling

被引：46
作者：
Chen, Taishi [1 ,2 ]
Liu, Wenqing [1 ,3 ,4 ]
Zheng, Fubao [5 ]
Gao, Ming [1 ,3 ]
Pan, Xingchen [1 ,2 ]
van der Laan, Gerrit [6 ]
Wang, Xuefeng [1 ,3 ]
Zhang, Qinfang [5 ]
Song, Fengqi [1 ,2 ]
Wang, Baigeng [1 ,2 ]
Wang, Baolin [5 ]
Xu, Yongbing [1 ,3 ,4 ]
Wang, Guanghou [1 ,2 ]
Zhang, Rong [1 ,3 ]
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Univ, Dept Phys, Nanjing 210093, Jiangsu, Peoples R China
[3] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
[4] Univ York, Dept Elect, York YO10 5DD, N Yorkshire, England
[5] Yancheng Inst Technol, Key Lab Adv Technol Environm Protect Jiangsu Prov, Yancheng 224051, Peoples R China
[6] Diamond Light Source, Didcot OX11 0DE, Oxon, England
来源：
ADVANCED MATERIALS | 2015年 / 27卷 / 33期
基金：
中国国家自然科学基金;
关键词：
topological insulators; dilute magnetic semiconductors; magnetic doping; X-ray magnetic circular dichroism (XMCD); ferromagnetism; QUANTUM OSCILLATIONS; PHASE-TRANSITION; SURFACE-STATES; THIN-FILMS; DICHROISM; BI2TE3;
D O I：
10.1002/adma.201501254
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
High-mobility (SmxBi1-x)(2)Se-3 topological insulators (with x = 0.05) show a Curie temperature of about 52 K, and the carrier concentration and Fermi wave vector can be manipulated by intentional Te introduction with no significant influence on the Curie temperature. The origin of the ferromagnetism is attributed to the trivalent Sm dopant, as confirmed by X-ray magnetic circular dichroism and first-principles calculations. The carrier concentration is on the order of 10 19 cm(-3) and the mobility can reach about 7200 cm(2) V-1 s(-1) with pronounced Shubnikov-de Haas oscillations.
引用
收藏
页码：4823 / 4829
页数：7
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