Experimental, analytical, and finite element analyses of nanoindentation of multilayer PZT/Pt/SiO2 thin film systems on silicon wafers

被引:10
作者
Chima-Okereke, C
Bushby, AJ
Reece, MJ [1 ]
Whatmore, RW
Zhang, Q
机构
[1] Univ London, Queen Mary, London E1 4NS, England
[2] Cranfield Univ, Cranfield MK43 0AL, Beds, England
关键词
D O I
10.1557/JMR.2006.0047
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The mechanical properties of lead zirconate titanate (PZT) multilayer systems are needed to model and design micro-electromechanical systems (MEMS) devices. Na'noindentation is a promising tool for obtaining the elastic properties of thin films. However, no means exist to obtain the elastic modulus of the lead zirconate titanate (PZT) in the multilayer system. The indentation modulus versus a/t behavior of the multilayered PZT/Pt/SiO2 film system on a silicon substrate was investigated and compared with finite element models and a new analytical Solution. Six different PZT film thicknesses were indented (100, 140, 400, 700, 1500, and 2000 11111), using 5-, 10-, and 20-mu m radius indenters. Good agreement was shown between the finite element analysis (FEA) and analytical solutions, and the experimental data. However the behavior of multilayer systems is complex, making deconvolution of properties difficult for films of less than a micron thick.
引用
收藏
页码:409 / 419
页数:11
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