Nanostructural analysis of ZnO:Al thin films for carrier-transport mechanisms

被引：14

作者：

Lee, Seung-Yoon ^{[1
,2
]}

Lee, Woojin ^{[2
]}

Nahm, Changwoo ^{[2
]}

Kim, Jongmin ^{[2
]}

Byun, Sujin ^{[2
]}

Hwang, Taehyun ^{[2
]}

Lee, Byung-Kee ^{[1
]}

Jang, Young Il ^{[1
]}

Lee, Sungeun ^{[1
]}

Lee, Heon-Min ^{[1
]}

Park, Byungwoo ^{[2
]}

机构：

[1] LG Elect Adv Res Inst, Emerging Technol Lab, Seoul 137724, South Korea

[2] Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, WCU Hybrid Mat Program, Seoul 151744, South Korea

来源：

CURRENT APPLIED PHYSICS | 2013年 / 13卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

Transparent conducting oxide; Al-doped ZnO; Sputtering; ZINC-OXIDE FILMS;

D O I：

10.1016/j.cap.2012.12.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The carrier mobility of sputter-deposited Al-doped ZnO transparent-conducting (ZnO:Al) thin films was controlled between 22 and 48 cm(2)/Vs by varying the ZnO: Al seed layer. The statistical distribution of the [001] grain misorientation was characterized from the X-ray diffraction rocking curve in the range from 0.043 (2.5 degrees) to 0.179 rad (10.2 degrees). The grain-boundary energy barriers (E-b) from Seto's model [1] clearly exhibit linear dependence on the grain-boundary misorientation angle (omega) according to the equation E-b = 78 +/- 4 + 173 +/- 32 omega meV. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：775 / 778

页数：4

共 16 条

[1] Efforts to improve carrier mobility in radio frequency sputtered aluminum doped zinc oxide films [J].

Agashe, C ;

Kluth, O ;

Hüpkes, J ;

Zastrow, U ;

Rech, B ;

Wuttig, M .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (04) :1911-1917

[2] The effect of front ZnO:Al surface texture and optical transparency on efficient light trapping in silicon thin-film solar cells [J].

Berginski, Michael ;

Huepkes, Juergen ;

Schulte, Melanie ;

Schoepe, Gunnar ;

Stiebig, Helmut ;

Rech, Bernd ;

Wuttig, Matthias .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (07)

[3] Resistivity of polycrystalline zinc oxide films: current status and physical limit [J].

Ellmer, K .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 34 (21) :3097-3108

[4] Carrier transport in polycrystalline transparent conductive oxides: A comparative study of zinc oxide and indium oxide [J].

Ellmer, Klaus ;

Mientus, Rainald .

THIN SOLID FILMS, 2008, 516 (14) :4620-4627

[5]

Joo M., 2011, J SURF ANAL, V17, P274

[6] Effect of Ga Doping on Transparent and Conductive Al-Doped ZnO Films Prepared Using Magnetron Cosputtering [J].

Kang, Dong-Won ;

Kim, Sun-Jae ;

Moon, Tae-Ho ;

Lee, Heon-Min ;

Han, Min-Koo .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (12)

[7] The effect of AlPO4-coating layer on the electrochemical properties in LiCoO2 thin films [J].

Kim, Byoungsoo ;

Kim, Chunjoong ;

Kim, Tae-Gon ;

Ahn, Donggi ;

Park, Byungwoo .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (09) :A1773-A1777

[8] Optical and electronic properties of post-annealed ZnO:Al thin films [J].

Kim, Yumin ;

Lee, Woojin ;

Jung, Dae-Ryong ;

Kim, Jongmin ;

Nam, Seunghoon ;

Kim, Hoechang ;

Park, Byungwoo .

APPLIED PHYSICS LETTERS, 2010, 96 (17)

[9] Microstructure and Light-Scattering Properties of ZnO:Al Films Prepared Using a Two-Step Process through the Control of Oxygen Pressure [J].

Moon, Taeho ;

Yoon, Wonki ;

Ji, Kwang Sun ;

Ahn, Seh-Won ;

Lee, Sungeun ;

Joo, Minho ;

Shin, Hui Youn ;

Park, Kyuho ;

Lee, Heon-Min .

APPLIED PHYSICS EXPRESS, 2010, 3 (09)

[10] TCO and light trapping in silicon thin film solar cells [J].

Müller, J ;

Rech, B ;

Springer, J ;

Vanecek, M .

SOLAR ENERGY, 2004, 77 (06) :917-930

← 1 2 →