Temperature and humidity effects on the stability of on-plastic a-Si:H thin film transistors with various conduction channel layer thicknesses

被引：0

作者：

Chen, Jian Z. ^{[1
]}

Cheng, I-Chun ^{[2
]}

机构：

[1] Natl Taiwan Univ, Inst Appl Mech, 1 Sec 4 Roosevelt Rd, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Dept Elect Engn, Taipei 10617, Taiwan

来源：

AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008 | 2008年 / 1066卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Stability is an important issue for the application of TFTs. In this paper, we present the effects of humidity and temperature on the stability of inverted-staggered back-channel-cut a-Si:H TFTs with various conduction channel layer thicknesses. We evaluated the stability of on-plastic TFTs of different conduction layer thicknesses made at a process temperature of 150 degrees C on 51-mu m thick Kapton polyimide foil substrates. With conduction channel layer thickness of 50nm, humidity reversibly varies the characteristics of TFTs, but TFTs of conduction layer thickness greater than 100 nm are pretty immune to the humidity change. The temperature dependent stability and characteristics of TFTs were analyzed from 20 degrees C to 60 degrees C. Rising temperature from 20 degrees C to 56 degrees C, the threshold voltage (V-t) drops about 2 volts; on-off current ratio decreases by one order of magnitude mainly due to thermally excited carriers in the off-region.

引用

页码：385 / +

页数：2

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