Hall effect measurements of surface conductive layer on undoped diamond films in NO2 and NH3 atmospheres

被引：0
作者：
Gi, RS
Tashiro, K
Tanaka, S
Fujisawa, T
Kimura, H
Kurosu, T
Iida, M
机构：
[1] Tokai Univ, Sch Engn, Dept Elect, Hiratsuka, Kanagawa 2591292, Japan
[2] NITTAN Co Ltd, Tech Div, Shibuya Ku, Tokyo 1518535, Japan
[3] Kyushu Tokai Univ, Sch Engn, Dept Elect Engn, Kumamoto 8620970, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 6A期
关键词：
diamond films; hydrogen-terminated surface; p-type surface conductive layer; Hall effect measurement; NO2; gas; NH3;
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In order to clarify the mechanism of change in resistance of the surface conductive layer exposed to oxidizing and reducing gases, the Hall effect measurements of the surface conductive layer on as-grown undoped diamond films in NO2 and NH3 gas atmospheres were carried out. It was found that holes were generated in the surface conductive layer by the adsorption of NO2 gas, and the adsorption of NH3 gas resulted in the disappearance of the holes. Morever, the dependences of gas concentration on the sheet resistivity, carrier density per unit area and Hall mobility were observed. The mechanism of change in resistance of the surface conductive layer in gas atmospheres could be explained by the proposed model based on the experimental results.
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页码：3492 / 3496
页数：5
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