Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors

被引：82

作者：

Jimenez, David ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Engn Elect, Escola Engn, Bellaterra 08193, Spain

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 24期

关键词：

Monolayers - Transition metals - Quantum theory - Field effect transistors - Surface potential;

D O I：

10.1063/1.4770313

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A physics-based model for the surface potential and drain current for monolayer transition metal dichalcogenide (TMD) field-effect transistor is presented. Taking into account the two-dimensional (2D) density-of-states of the atomic layer thick TMD and its impact on the quantum capacitance, a model for the surface potential is presented. Next, considering a drift-diffusion mechanism for the carrier transport along the monolayer TMD, an explicit expression for the drain current has been derived. The model has been benchmarked with a measured prototype transistor. Based on the proposed model, the device design window targeting low-power applications is discussed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770313]

引用

页数：4

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