Trap layer engineered gate-all-around vertically stacked twin Si-nanowire nonvolatile memory

Trap layer engineered gate-all-around (GAA) silicon nanowire SONOS memory showing excellent device performance is demonstrated for the first time. Nitride and silicon nanocrystal (Si-NC) has have been incorporated as the engineered charge trapping layer. Fast transient memory characteristic is shown owing to the nanowire channel structure The device with embedded Si-NC achieves even faster higher memory speed and increased window, up to 3.2 V Delta V-th shift for 1 mu s and 6.25 V memory window. The nanowire based non-volatile SONOS memory is promising for the future high speed and low power NAND-type flash memory application.