Thin InAs membranes and GaSb buffer layers on GaAs(001) substrates

被引：4

作者：

Astromskas, Gvidas ^{[1
]}

Borg, Mattias ^{[1
]}

Wernersson, Lars-Erik ^{[1
]}

机构：

[1] Lund Univ, SE-22100 Lund, Sweden

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2012年 / 30卷 / 05期

基金：

瑞典研究理事会;

关键词：

atomic force microscopy; buffer layers; Hall effect; III-V semiconductors; indium compounds; MOCVD; nucleation; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; X-ray diffraction; GROWTH; MOVPE; HETEROJUNCTIONS; SEMICONDUCTOR; SUPERLATTICES; MOBILITY; GAAS;

D O I：

10.1116/1.4739425

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin InAs layers and membranes are fabricated on GaAs substrates using GaSb buffer layers grown by MOVPE. The quality of the GaSb buffer layers is optimized and epitaxial InAs layers are grown on GaSb layers of various thickness. The best GaSb buffer layers are obtained for a nucleation temperature of 450 degrees C and a subsequent growth temperature of 570 degrees C with a V/III ratio of 3, as confirmed by both the structural (high-resolution XRD, AFM) and electrical (Hall) measurements. Furthermore, a clear relationship between the structural quality of the GaSb and InAs layers is established. Finally, free-standing InAs structures are fabricated where Hall measurements reveal a mobility that depends on the film thickness.

引用

页数：5

共 21 条

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