Design of free patterns of nanocrystals with ad hoc features via templated dewetting

被引：34

作者：

Aouassa, M. ^{[1
]}

Berbezier, I. ^{[1
]}

Favre, L. ^{[1
]}

Ronda, A. ^{[1
]}

Bollani, M. ^{[2
]}

Sordan, R. ^{[2
]}

Delobbe, A. ^{[3
]}

Sudraud, P. ^{[3
]}

机构：

[1] Aix Marseille Univ, CNRS, IM2NP, Marseille, France

[2] LNES, Como, Italy

[3] Orsay Phys, Fuveau, France

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 01期

关键词：

amorphous semiconductors; elemental semiconductors; focused ion beam technology; germanium; molecular beam epitaxial growth; nanofabrication; nanopatterning; nanostructured materials; semiconductor epitaxial layers; semiconductor growth; silicon; silicon-on-insulator; wetting; GE NANOCRYSTALS; SILICON NANOCRYSTALS; SI NANOCRYSTALS; CHARGE STORAGE; THIN-FILMS; METAL-ION; IMPLANTATION; EMISSION; ENERGY;

D O I：

10.1063/1.4730620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Design of monodisperse ultra-small nanocrystals (NCs) into large scale patterns with ad hoc features is demonstrated. The process makes use of solid state dewetting of a thin film templated through alloy liquid metal ion source focused ion beam (LMIS-FIB) nanopatterning. The solid state dewetting initiated at the edges of the patterns controllably creates the ordering of NCs with ad hoc placement and periodicity. The NC size is tuned by varying the nominal thickness of the film while their position results from the association of film retraction from the edges of the lay out and Rayleigh-like instability. The use of ultra-high resolution LMIS-FIB enables to produce monocrystalline NCs with size, periodicity, and placement tunable as well. It provides routes for the free design of nanostructures for generic applications in nanoelectronics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4730620]

引用

页数：4

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