Surface modification with high-power glow discharges is a promising physical vapor deposition (PVD) technology for industrial usage. A metal ion density higher than 10(18) m(-3) can be obtained due to a high-power input in the plasma. In the present paper, titanium films were deposited on Si (100) substrates using high-power impulse magnetron sputtering (HIPIMS). The pulse duration was varied to investigate the deposition rate and the titanium film structure. The plasma source was an unbalanced magnetron sputtering (UBMS) discharge generation system. The deposition rate was correlated to the electrical characteristics. There was an instantaneous power threshold of approximately 36 kW to significantly increase the deposition rate by 4-5 times. The deposition rate increased linearly with respect to the average power until the average power reached 5.6 kW (about 30 W/cm(2) for a total area of the target), and an 83% increase of the deposition rate from the linear relationship was observed. The increase of the deposition rate was possibly closely related to the so-called thermal spike, where the target temperature increases due to a high power input to the target. The surface morphology and the crystalline structure of the films were studied for a variety of pulse durations, and the results were compared to the case of the direct-current magnetron sputtering (dcMS) process. The titanium films at an average power of 1.2 kW and a pulse duration of 50 mu s have a smaller crystalline size and a smoother surface than those at an average power of 825 W by dcMS. The crystal orientation (101) was dominated when the pulse duration was lengthened to 180 mu s, although the (002) orientation was dominant in dcMS. The crystal size and the surface roughness increased significantly when the pulse duration was increased from 50 mu s to 180 mu s in HIPIMS. The consumed power in the plasma by HIPIMS can be an important parameter for the crystal size and the structure. (C) 2012 Published by Elsevier Ltd.
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Appl Elect LLC, 97-10 Elizarov Str, Tomsk 634055, RussiaRAS, SB, Inst High Current Elect, 2-3 Akademichesky Ave, Tomsk 634055, Russia
Oskirko, V. O.
Zakharov, A. N.
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RAS, SB, Inst High Current Elect, 2-3 Akademichesky Ave, Tomsk 634055, RussiaRAS, SB, Inst High Current Elect, 2-3 Akademichesky Ave, Tomsk 634055, Russia
Zakharov, A. N.
Grenadyorov, A. S.
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RAS, SB, Inst High Current Elect, 2-3 Akademichesky Ave, Tomsk 634055, RussiaRAS, SB, Inst High Current Elect, 2-3 Akademichesky Ave, Tomsk 634055, Russia
Grenadyorov, A. S.
Pavlov, A. P.
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RAS, SB, Inst High Current Elect, 2-3 Akademichesky Ave, Tomsk 634055, Russia
Appl Elect LLC, 97-10 Elizarov Str, Tomsk 634055, RussiaRAS, SB, Inst High Current Elect, 2-3 Akademichesky Ave, Tomsk 634055, Russia
Pavlov, A. P.
Semenov, V. A.
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RAS, SB, Inst High Current Elect, 2-3 Akademichesky Ave, Tomsk 634055, RussiaRAS, SB, Inst High Current Elect, 2-3 Akademichesky Ave, Tomsk 634055, Russia
Semenov, V. A.
Rabotkin, S. V.
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RAS, SB, Inst High Current Elect, 2-3 Akademichesky Ave, Tomsk 634055, RussiaRAS, SB, Inst High Current Elect, 2-3 Akademichesky Ave, Tomsk 634055, Russia
Rabotkin, S. V.
Kozhevnikov, V. Yu.
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RAS, SB, Inst High Current Elect, 2-3 Akademichesky Ave, Tomsk 634055, RussiaRAS, SB, Inst High Current Elect, 2-3 Akademichesky Ave, Tomsk 634055, Russia
Kozhevnikov, V. Yu.
Solovyev, A. A.
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RAS, SB, Inst High Current Elect, 2-3 Akademichesky Ave, Tomsk 634055, RussiaRAS, SB, Inst High Current Elect, 2-3 Akademichesky Ave, Tomsk 634055, Russia
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Inst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, Russia
Appl Elect LLC, 97-10 Elizarov Str, Tomsk 634055, RussiaInst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, Russia
Oskirko, V. O.
Semenov, V. D.
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Tomsk State Univ Control Syst & Radioelect, 40 Lenin Ave, Tomsk 634050, RussiaInst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, Russia
Semenov, V. D.
Solovyev, A. A.
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Inst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, RussiaInst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, Russia
Solovyev, A. A.
Rabotkin, S., V
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Inst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, RussiaInst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, Russia
Rabotkin, S., V
Pavlov, A. P.
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Inst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, Russia
Appl Elect LLC, 97-10 Elizarov Str, Tomsk 634055, RussiaInst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, Russia
Pavlov, A. P.
Zakharov, A. N.
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Inst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, RussiaInst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, Russia
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Korea Univ, Dept Mat Sci & Engn, 145 Anam Ro, Seoul 02841, South KoreaKorea Inst Sci & Technol, Adv Photovolta Res Ctr, 5,14 Gil Hwarang Ro, Seoul 02792, South Korea
Lim, Sang Ho
Han, Seunghee
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Korea Inst Sci & Technol, Adv Photovolta Res Ctr, 5,14 Gil Hwarang Ro, Seoul 02792, South KoreaKorea Inst Sci & Technol, Adv Photovolta Res Ctr, 5,14 Gil Hwarang Ro, Seoul 02792, South Korea