Correlation of crystal quality and extreme magnetoresistance of WTe2

被引:101
|
作者
Ali, Mazhar N. [1 ]
Schoop, Leslie [1 ]
Xiong, Jun [2 ,3 ]
Flynn, Steven [1 ]
Gibson, Quinn [1 ]
Hirschberger, Max [2 ,3 ]
Ong, N. P. [2 ,3 ]
Cava, R. J. [1 ]
机构
[1] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA
[2] Princeton Univ, Joseph Henry Labs, Princeton, NJ 08544 USA
[3] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA
基金
美国国家科学基金会;
关键词
COLOSSAL MAGNETORESISTANCE; GIANT MAGNETORESISTANCE;
D O I
10.1209/0295-5075/110/67002
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
High-quality single crystals of WTe2 were grown using a Te flux followed by a cleaning step involving self-vapor transport. The method is reproducible and yields consistently higher-quality single crystals than are typically obtained via halide-assisted vapor transport methods. Magnetoresistance (MR) values at 9 tesla and 2 kelvin as high as 1.75million %, nearly an order of magnitude higher than previously reported for this material, were obtained on crystals with residual resistivity ratio (RRR) of approximately 1250. The MR follows a near B-2 law (B = 1.95(1)) and, assuming a semiclassical model, the average carrier mobility for the highest-quality crystal was found to be 167, 000 cm(2)/Vs at 2K. A correlation of RRR, MR ratio and average carrier mobility (mu(avg)) is found with the cooling rate during the flux growth. editor's choice Copyright (C) EPLA, 2015
引用
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页数:4
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