Cathodoluminescence and ion beam analysis of ion-implanted combinatorial materials libraries on thermally grown SiO2

被引：6

作者：

Chen, CM ^{[1
]}

Pan, HC ^{[1
]}

Zhu, DZ ^{[1
]}

Hu, J ^{[1
]}

Li, MQ ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Nucl Res, Shanghai 201800, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 159卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/S0168-583X(99)00449-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A method combining ion implantation and physical masking technique has been used to generate material libraries of various ion-implanted samples. Ion species of C, Ga, N, Pb, Sn, Y have been sequentially implanted to an SiO2 film grown on a silicon wafer through combinatorial masks and consequently a library of 64 (2(6)) samples is generated by 6 masking combinations. This approach offers rapid synthesis of samples with potential new compounds formed in the matrix, which may have specific luminescent properties. The depth-resolved cathodoluminescence (CL) measurements revealed some specific optical property in the samples correlated with implanted ion distributions. A marker-based technique is developed for the convenient location of sample site in the analysis of Rutherford backscattering spectrometry (RBS) and proton elastic scattering (PES), intended to characterize rapidly the ion implanted film libraries. These measurements demonstrate the power of nondestructively and rapidly characterizing composition and the inhomogeneity of the combinatorial film libraries, which may determine their physical properties. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：81 / 88

页数：8

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