Optical transition in self-assembled InAs/GaAs quantum lens under high hydrostatic pressure

被引：17

作者：

Rodriguez, Arezky H. ^{[1
]}

Trallero-Giner, C. ^{[2
]}

Duque, C. A. ^{[3
]}

Vazquez, G. J. ^{[4
]}

机构：

[1] Univ Autonoma Ciudad Mexico, Acad Matemat, Mexico City 03020, DF, Mexico

[2] Univ La Habana, Fac Fis, Havana 10400, Cuba

[3] Univ Antioquia, Inst Fis, AA-1226 Medellin, Colombia

[4] Univ Nacl Autonoma Mexico, Inst Fis, Mexico City 01000, DF, Mexico

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 04期

关键词：

effective mass; gallium arsenide; high-pressure effects; III-V semiconductors; indium compounds; photoluminescence; self-assembly; semiconductor quantum dots; RESONANT RAMAN-SCATTERING; ELECTRONIC-STRUCTURE; MAGNETIC-FIELD; EXCITED-STATES; ENERGY-LEVELS; DOTS; PHOTOLUMINESCENCE; COEFFICIENTS; INAS; DEPENDENCE;

D O I：

10.1063/1.3078109

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a simulation to characterize the dependence on hydrostatic pressure for the photoluminescence spectra in self-assembled quantum dots with lens shape geometry. We have tested the physical effects of the band offset and electron-hole effective masses on the optical emission in dot lens. The model could be implemented to get qualitative information of the parameters involved in the quantum dot or the measured optical properties as function of pressure.

引用

页数：6

共 46 条

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