Raman scattering study of a GaAsN epitaxial layer

被引：7
作者：
Yu, GY [1 ]
Shen, ZX [1 ]
Liu, L [1 ]
Sun, WX [1 ]
机构：
[1] Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2001年 / 4卷 / 06期
关键词：
GaAsN; Raman scattering; phonon correlation length;
D O I：
10.1016/S1369-8001(02)00022-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Raman scattering study of a dilute GaAsN epitaxy layer was carried out at variable temperature and pressure. The localization due to the presence of the N atoms is responsible for the small correlation length in the GaAsN alloy, which is also evident from the broadening and asymmetry of the LO mode of the GaAs-like Raman band. The temperature dependence of the correlation length was analyzed. Nitrogen-induced localization also has a strong influence on the pressure dependence of the Born's effective dynamic charge e*. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：581 / 584
页数：4
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