An Investigation of Total Ionizing Dose Damage on a Pulse Generator Intended for Space-Based Impulse Radio UWB Transceivers

被引：3

作者：

Inanlou, Farzad ^{[1
]}

Kenyon, Eleazar ^{[1
]}

Cressler, John ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2013年 / 60卷 / 04期

关键词：

Radiation effects; SiGe BiCMOS; space vehicle telemetry; total ionization dosage (TID); ultra-wideband (UWB); CMOS UWB; SIGE; PERFORMANCE; TECHNOLOGY; RF;

D O I：

10.1109/TNS.2013.2248022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate, for the first time, the effects of total ionizing dose (TID) on a CMOS pulse generator implemented in a SiGe BiCMOS platform, and which is intended for use in space-based impulse radio ultra-wideband transceivers. The pulse generater was fabricated in Jazz Semiconductor's SBC18-H3 SiGe BiCMOS process technology, which combines 250 GHz SiGe HBTs and 180 nm CMOS. Total dose effects were examined using a 10-keV X-ray source. The effects of the TID on the performance of the pulse generator were investigated and a compensation scheme for mitigating these radiation effects is proposed.

引用

页码：2605 / 2610

页数：6

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