Design of a 32.7-GHz bandwidth AGC amplifier IC with wide dynamic range implemented in SiGe HBT

被引：23
作者：
Ohhata, K [1 ]
Masuda, T
Ohue, E
Washio, K
机构：
[1] Hitachi Ltd, Device Engn, Tokyo 1858601, Japan
[2] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1999年 / 34卷 / 09期
关键词：
automatic gain control (AGC) amplifier; optical transmission system; SiGe heterojunction bipolar transistor (HBT);
D O I：
10.1109/4.782090
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A wide-bandwidth automatic gain control (AGC) amplifier IC was developed using a self-aligned selective-epitaxial Sice heterojunction bipolar transistor (HBT). A transimpedance load circuit was used, and its damping factor was optimized to achieve a a ide bandwidth of 32.7 GHz, Capacitor peaking was introduced to the second variable-gain amplifier in order to obtain a wide gain dynamic range of 19 dB, The amplifier IC has a noise figure of 18 dB and an eye pattern at 25 Gb/s.
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收藏
页码：1290 / 1297
页数：8
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