Advantages of blue InGaN light-emitting diodes with composition-graded barriers and electron-blocking layer

被引：14

作者：

Chang, Jih-Yuan ^{[1
]}

Kuo, Yen-Kuang ^{[1
]}

机构：

[1] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2013年 / 210卷 / 06期

关键词：

efficiency droop; InGaN; light-emitting diodes; POLARIZATION; MODEL;

D O I：

10.1002/pssa.201228764

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Blue InGaN light-emitting diodes (LEDs) with composition-graded barriers and composition-garded electron-blocking layer (EBL) are studied theoretically. Simulation results show that the employment of composition-graded barriers and compositon-graded EBL simultaneously can benefit from the enhanced hole-injection efficiency and more uniform carrier distribution among the quantum wells. Moreover, the optical and electrical properties of the InGaN blue LEDs are markedly promoted. The graded barriers are investigated systematically in an attempt to obtain the optimal situation.

引用

页码：1103 / 1106

页数：4

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