Demonstration of high-Q mid-infrared chalcogenide glass-on-silicon resonators

被引：96

作者：

Lin, Hongtao ^{[1
]}

Li, Lan ^{[1
]}

Zou, Yi ^{[1
]}

Danto, Sylvain ^{[2
]}

Musgraves, J. David ^{[2
]}

Richardson, Kathleen ^{[2
]}

Kozacik, Stephen ^{[3
]}

Murakowski, Maciej ^{[3
]}

Prather, Dennis ^{[3
]}

Lin, Pao T. ^{[4
]}

Singh, Vivek ^{[4
]}

Agarwal, Anu ^{[4
]}

Kimerling, Lionel C. ^{[4
]}

Hu, Juejun ^{[1
]}

机构：

[1] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA

[2] Univ Cent Florida, Dept Mat Sci & Engn, Coll Opt & Photon, Orlando, FL 32816 USA

[3] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA

[4] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

OPTICS LETTERS | 2013年 / 38卷 / 09期

基金：

美国国家科学基金会;

关键词：

PHOTONIC CRYSTAL CAVITIES; GE-SB-S; WAVE-GUIDES; PHOTOTHERMAL SPECTROSCOPY; STRUCTURAL-PROPERTIES; FABRICATION; DESIGN; FILMS;

D O I：

10.1364/OL.38.001470

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrated high-index-contrast, waveguide-coupled As2Se3 chalcogenide glass resonators monolithically integrated on silicon fabricated using optical lithography and a lift-off process. The resonators exhibited a high intrinsic quality factor of 2 x 10(5) at 5.2 mu m wavelength, which is among the highest values reported in on-chip mid-infrared (mid-IR) photonic devices. The resonator can serve as a key building block for mid-IR planar photonic circuits. (C) 2013 Optical Society of America

引用

页码：1470 / 1472

页数：3

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