Thermal Stress Characteristics and Reliability Impact on 3-D ICs Containing Through-Silicon-Vias

被引：0

作者：

Jiang, Tengfei ^{[1
]}

Ryu, Suk-Kyu ^{[2
]}

Zhao, Qiu ^{[1
]}

Im, Jay ^{[1
]}

Son, Ho-Young ^{[3
]}

Byun, Kwang-Yoo ^{[3
]}

Huang, Rui ^{[2
]}

Ho, Paul S. ^{[1
]}

机构：

[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78712 USA

[2] Univ Texas, Dept Aerosp Engn & Mech, Austin, TX 78712 USA

[3] Sk Hynix Inc, Icheon, South Korea

来源：

2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | 2012年

关键词：

RAMAN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermal stresses in TSV structures have been measured using micro-Raman spectroscopy and precision wafer curvature technique as a function of temperature and during thermal cycling. The results were verified by finite element analysis (FEA) to characterize the thermomechanical behavior of the TSV structures. An initial nonlinear curvature behavior was observed and was attributed to grain growth, which was followed by a linear and reversible behavior. The impact of thermal stresses on the keep-out zone (KOZ) for devices near the TSVs was investigated.

引用

页码：244 / 246

页数：3

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