A Two-Way Interleaved 7-b 2.4-GS/s 1-Then-2 b/Cycle SAR ADC With Background Offset Calibration

被引:65
作者
Chan, Chi-Hang [1 ]
Zhu, Yan [1 ]
Zhang, Wai-Hong [1 ]
Seng-Pan, U. [1 ,2 ]
Martins, Rui Paulo [1 ]
机构
[1] Univ Macau, State Key Lab Analog & Mixed Signal VLSI, Macau, Peoples R China
[2] Synopsys Macau Ltd, Macau, Peoples R China
关键词
1-then-2 b/cycle SAR ADC; analog-to-digital conversion; background offset calibration; multi-bit/cycle SAR ADC; time interleaving;
D O I
10.1109/JSSC.2017.2785349
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a 2x time-interleaved 7-b 2.4-GS/s 1-then-2 bicycle SAR ADC in 28-nm CMOS. The process-voltage-temperature sensitivity of a multi-bit SAR architecture has been improved by the proposed 1-then-2 bicycle scheme with background offset calibration. With the pre-charge reduction scheme, the traditional large switching energy and time consuming pre-charge operation have been removed, which simultaneously enables a simple control logic without the need of a V-cm voltage. Besides, a background offset calibration is implemented on chip which does not involve any extra phase or calibration input signal. Its operation is well embedded within the 1-then-2 bicycle architecture, thus leading to a very minimal modification of the ADC core. With an improved fringing DAC structure and a high-speed dynamic logic circuit, a single-channel ADC can work at 1.2 GS/s under a 0.9-V supply. Using two-way time interleaving, the prototype samples at 2.4 GHz and consumes 5-mW power including the on-chip background offset calibration. It exhibits a 40.05-dB SNDR at Nyquist, leading to a Walden FoM of 25.3 fJ/conversion step. Measurement results show that the SNDR of the ADC can be kept above 38 dB at 2 GS/s under a wide range of temperature, supply, and input common-mode variation.
引用
收藏
页码:850 / 860
页数:11
相关论文
共 21 条
[21]   A 10-bit 100-MS/s Reference-Free SAR ADC in 90 nm CMOS [J].
Zhu, Yan ;
Chan, Chi-Hang ;
Chio, U-Fat ;
Sin, Sai-Weng ;
U, Seng-Pan ;
Martins, Rui Paulo ;
Maloberti, Franco .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2010, 45 (06) :1111-1121