Analysis of I-V-T Characteristics of Au/n-InP Schottky Barrier Diodes with Modeling of Nanometer-Sized Patches at Low Temperature

被引：10
|
作者：
Fritah, A. [1 ]
Dehimi, L. [1 ,2 ]
Pezzimenti, F. [3 ]
Saadoune, A. [1 ]
Abay, B. [4 ]
机构：
[1] Univ Biskra, Lab Metall & Semicond Mat, Biskra, Algeria
[2] Elhadj Lakhdar Univ, Fac Sci, Batna, Algeria
[3] Mediterranea Univ Reggio Calabria, DIIES, I-89100 Reggio Di Calabria, Italy
[4] Ataturk Univ, Dept Phys, Fac Sci, TR-25240 Erzurum, Turkey
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2019年 / 48卷 / 06期
关键词：
Schottky diode; barrier height; numerical simulation; patch area; CURRENT-VOLTAGE CHARACTERISTICS; DEPENDENT CURRENT-VOLTAGE; ELECTRICAL CHARACTERISTICS; TRANSPORT; GAAS; AL; PERFORMANCE; INTERFACE;
D O I：
10.1007/s11664-019-07129-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The current-voltage (I-V) characteristics of inhomogeneous Au/n-InP Schottky barrier (SB) diodes have been investigated in the temperature range of 100K to 300K, and detailed numerical simulation study carried out using a physical device simulator. The experimental I-V curves for the diode in both forward- and reverse-bias conditions were fit to explain the current transport mechanisms at low temperature. Tunneling current flows through the native oxide and nanometer-sized patches embedded at the Au/n-InP interface. These patches result in a lower (local) barrier height which is temperature dependent and responsible for the diode current behaviors in the low-bias regime. The patch area is on the order of one-millionth of the total diode area, and the SB is between 0.01eV and 0.3eV in the patch region. The simulation results are in good agreement with the measurements in the whole explored current range extending over six orders of magnitude.
引用
收藏
页码：3692 / 3698
页数：7
相关论文
共 40 条
  • [1] Analysis of I–V–T Characteristics of Au/n-InP Schottky Barrier Diodes with Modeling of Nanometer-Sized Patches at Low Temperature
    A. Fritah
    L. Dehimi
    F. Pezzimenti
    A. Saadoune
    B. Abay
    Journal of Electronic Materials, 2019, 48 : 3692 - 3698
  • [2] Traps effect on the I-V-T characteristics of Au/n-InP Schottky barrier diode
    Fritah, Abdallah
    Dehimi, Lakhder
    Saadoune, Achour
    Bekhouche, Khaled
    2018 INTERNATIONAL CONFERENCE ON COMMUNICATIONS AND ELECTRICAL ENGINEERING (ICCEE), 2018, : 10 - 14
  • [3] Current-voltage-temperature (I-V-T) characteristics of Pd/Au Schottky contacts on n-InP (111)
    Reddy, M. Bhaskar
    Kumar, A. Ashok
    Janardhanam, V.
    Reddy, V. Rajagopal
    Reddy, P. Narasimha
    CURRENT APPLIED PHYSICS, 2009, 9 (05) : 972 - 977
  • [4] Investigation on the non-ideal behaviour of Au/n-InP Schottky diodes by the simulation of I-V-T and C-V-T characteristics
    Fritah, A.
    Saadoune, A.
    Dehimi, L.
    Abay, B.
    PHILOSOPHICAL MAGAZINE, 2016, 96 (19) : 2009 - 2026
  • [5] Electrical transport characteristics of ruthenium/n-InP Schottky diodes from current-voltage-temperature (I-V-T) measurements
    Janardhanam, V.
    Kumar, A. Ashok
    Reddy, V. Rajagopal
    Reddy, P. Narasimha
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2008, 2 (11): : 735 - 742
  • [6] Temperature-dependent current-voltage characteristics of the Au/n-InP diodes with inhomogeneous Schottky barrier height
    Cimilli, F. E.
    Saglam, M.
    Efeoglu, H.
    Turut, A.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (8-11) : 1558 - 1562
  • [7] Analysis of current-voltage-temperature (I-V-T) and capacitance-voltage-temperature (C-V-T) characteristics of Ni/Au Schottky contacts on n-type InP
    Naik, S. Shankar
    Reddy, V. Rajagopal
    SUPERLATTICES AND MICROSTRUCTURES, 2010, 48 (03) : 330 - 342
  • [8] The distribution of barrier heights in Au/n-Si Schottky barrier diodes from I-V-T measurements
    Durmus, P.
    Cuha, B.
    Altindal, S.
    Aydemir, U.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2010, 4 (04): : 579 - 583
  • [9] Current-voltage characteristics of Ag/TiO2/n-InP/Au Schottky barrier diodes
    Bilgili, Ahmet Kursat
    Guzel, Tamer
    Ozer, Metin
    JOURNAL OF APPLIED PHYSICS, 2019, 125 (03)
  • [10] Temperature-dependent current-conduction mechanisms in Au/n-InP Schottky barrier diodes (SBDs)
    Korucu, D.
    Mammadov, T. S.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2012, 14 (1-2): : 41 - 48
1234