Electrical properties of titanium nitride films synthesized by reactive magnetron sputtering

被引：8

作者：

Mohammed, W. M. ^{[1
]}

Gumarov, A. I. ^{[1
]}

Vakhitov, I. R. ^{[1
]}

Yanilkin, I. V. ^{[1
]}

Kiiamov, A. G. ^{[1
]}

Kharintsev, S. S. ^{[1
]}

Nikitin, S. I. ^{[1
]}

Tagirov, L. R. ^{[1
]}

Yusupov, R. V. ^{[1
]}

机构：

[1] Kazan Fed Univ, Kremlevskaya Str 16a, Kazan 420008, Russia

来源：

INTERNATIONAL CONFERENCE - THE PHYSICS OF LOW TEMPERATURE PLASMA (PLTP-2017) | 2017年 / 927卷

关键词：

TIN; COATINGS; GROWTH;

D O I：

10.1088/1742-6596/927/1/012036

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

Reactive dc magnetron sputtering was employed to produce thin films of titanium nitride using titanium metallic target, argon as the plasma gas and nitrogen as the reactive gas. A set of the films was studied deposited on the Si, fused silica and crystalline (001) MgO substrates with various deposition conditions. The films deposited on the Si and SiO2 substrates are polycrystalline while deposited at slow rate to the heated to 600 degrees C MgO substrate are highly epitaxial according both to XRD and LEED data. Electrical resistivity of the films was measured by means of the four-probe van der Pauw method.

引用

页数：5

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