Negative induction effect of graphite N on graphene quantum dots: tunable band gap photoluminescence

被引：153
作者：
Zhu, Chong [1 ,2 ,3 ]
Yang, Siwei [3 ]
Wang, Gang [3 ]
Mo, Runwei [3 ]
He, Peng [3 ]
Sun, Jing [3 ]
Di, Zengfeng [3 ]
Yuan, Ningyi [1 ,2 ]
Ding, Jianning [1 ,2 ]
Ding, Guqiao [3 ]
Xie, Xiaoming [3 ]
机构：
[1] Changzhou Univ, Sch Mat Sci & Engn, Jiangsu Collaborat Innovat Ctr Photovolat Sci & E, Jiangsu Prov Cultivat Base State Key Lab Photovol, Changzhou 213164, Jiangsu, Peoples R China
[2] Changzhou Univ, Jiangsu Prov Cultivat Base State Key Lab Photovol, Changzhou 213164, Jiangsu, Peoples R China
[3] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200500, Peoples R China
来源：
JOURNAL OF MATERIALS CHEMISTRY C | 2015年 / 3卷 / 34期
关键词：
VISIBLE-LIGHT; MORPHOLOGY CONTROL; FACILE SYNTHESIS; UP-CONVERSION; CARBON; NANOPARTICLES; FLUORESCENCE; OXIDE; FABRICATION; PH;
D O I：
10.1039/c5tc01933h
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We synthesized nitrogen-doped graphene quantum dots (N-GQDs) under a high temperature range of 800-1200 degrees C and high pressure of 4.0 GPa through a solid-to-solid process. The graphite N in N-GQDs has a strong negative induction effect on the band gap. Without the interference of surface groups, the direct band gap of these N-GQDs increased with increased nitrogen doping, resulting in tunable photoluminescence (PL) with a high PL efficiency. Based on the recognized PL rules, we synthesised N-GQDs with a higher doping concentration and near ultraviolet light-emittance.
引用
收藏
页码：8810 / 8816
页数：7
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