Negative induction effect of graphite N on graphene quantum dots: tunable band gap photoluminescence

被引：149

作者：

Zhu, Chong ^{[1
,2
,3
]}

Yang, Siwei ^{[3
]}

Wang, Gang ^{[3
]}

Mo, Runwei ^{[3
]}

He, Peng ^{[3
]}

Sun, Jing ^{[3
]}

Di, Zengfeng ^{[3
]}

Yuan, Ningyi ^{[1
,2
]}

Ding, Jianning ^{[1
,2
]}

Ding, Guqiao ^{[3
]}

Xie, Xiaoming ^{[3
]}

机构：

[1] Changzhou Univ, Sch Mat Sci & Engn, Jiangsu Collaborat Innovat Ctr Photovolat Sci & E, Jiangsu Prov Cultivat Base State Key Lab Photovol, Changzhou 213164, Jiangsu, Peoples R China

[2] Changzhou Univ, Jiangsu Prov Cultivat Base State Key Lab Photovol, Changzhou 213164, Jiangsu, Peoples R China

[3] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200500, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2015年 / 3卷 / 34期

关键词：

VISIBLE-LIGHT; MORPHOLOGY CONTROL; FACILE SYNTHESIS; UP-CONVERSION; CARBON; NANOPARTICLES; FLUORESCENCE; OXIDE; FABRICATION; PH;

D O I：

10.1039/c5tc01933h

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We synthesized nitrogen-doped graphene quantum dots (N-GQDs) under a high temperature range of 800-1200 degrees C and high pressure of 4.0 GPa through a solid-to-solid process. The graphite N in N-GQDs has a strong negative induction effect on the band gap. Without the interference of surface groups, the direct band gap of these N-GQDs increased with increased nitrogen doping, resulting in tunable photoluminescence (PL) with a high PL efficiency. Based on the recognized PL rules, we synthesised N-GQDs with a higher doping concentration and near ultraviolet light-emittance.

引用

页码：8810 / 8816

页数：7

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