LOW POWER LOW VOLTAGE CNTFET-BASED CURRENT DIFFERENCING BUFFERED AMPLIFIER

Problems met by CMOS Technology mainly includes dopant fluctuation, tunnelling effect and line edge roughness below 45nm technology. Carbo nanotube based structures is better option for extending the Moore's law due to its scalability, higher mobility and channel electrostatics. In this manuscript we demonstrate an optimum design for low power low voltage CNTFET based CDBA at 32nm technology node. The proposed circuit consist of CDBA with CNTFET and flipped voltage follower current sources (FVSCF) designed technique to obtain the high performance. The minimum supply voltages of +/- 0.6V with 32nm technology mode is used. The performance of the CNTFET-CDBA is verified with HSPICE. In this paper CNFET-based CDBA provides results at higher frequency with less power consumption as compared with CMOS. All the simulation results are tested on HSPICE.