Low power 23-GHz and 27-GHz distributed cascode amplifiers in a standard 130nm SOICMOS process

被引：2

作者：

Pavageau, C ^{[1
]}

Moussa, MS ^{[1
]}

Siligaris, A ^{[1
]}

Picheta, L ^{[1
]}

Danneville, F ^{[1
]}

Raskin, JP ^{[1
]}

Vanhoenaker-Janvier, D ^{[1
]}

Russat, J ^{[1
]}

Fel, N ^{[1
]}

机构：

[1] CNRS, UMR 8520, IEMN, F-59652 Villeneuve Dascq, France

来源：

2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4 | 2005年

关键词：

CMOS; distributed amplifier; microstrip; NUMIC; silicon on insulator;

D O I：

10.1109/MWSYM.2005.1517200

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two fully integrated distributed amplifiers (DA) were designed using a standard 130 nm Partially-Depleted Silicon.-On-Insulator CMOS process. They make use of either Body-Contacted (BC) or Floating-Body (FB) MOSFETs, and microstrip lines. The BC-DA has a 5.4 dB gain and a unity-gain bandwidth of 23 GHz whereas the FB-DA has a 6.8 dB gain and a unity-grain bandwidth of 27 GHz. The measured output power at I dB compression is 5 dBm at 5 GHz and the noise figure is 6.5-7.5 dB over 6-18 GHz for both DAs. Power consumption is 58 mW at 1.4 V.

引用

页码：2243 / 2246

页数：4

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