Spin-transfer switching in MgO magnetic tunnel junction nanostructures

被引：17
作者：
Huai, Yiming [1 ]
Pakala, Mahendra [1 ]
Diao, Zhitao [1 ]
Apalkov, Dmytro [1 ]
Ding, Yunfei [1 ]
Panchula, Alex [1 ]
机构：
[1] Grandis Inc, Milpitas, CA 95035 USA
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2006年 / 304卷 / 01期
关键词：
spin transfer; MTJ; MRAM;
D O I：
10.1016/j.jmmm.2006.04.016
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Spin-transfer driven switching was observed in MgO based magnetic tunnelling junctions (MTJ) with tunnelling magneto resistance ratio of up to 160% and the average intrinsic switching current density (J(c0)) down to 2 MA/cm(2), which are the best known results reported in spin-transfer switched MTJ nanostructures. Based on a comparison of results both from MgO and AlOx MTJs, further switching current decrease via MgO dual structures with two pinned layers is discussed. (C) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：88 / 92
页数：5
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