Spin-transfer switching in MgO magnetic tunnel junction nanostructures

被引：17

作者：

Huai, Yiming ^{[1
]}

Pakala, Mahendra ^{[1
]}

Diao, Zhitao ^{[1
]}

Apalkov, Dmytro ^{[1
]}

Ding, Yunfei ^{[1
]}

Panchula, Alex ^{[1
]}

机构：

[1] Grandis Inc, Milpitas, CA 95035 USA

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2006年 / 304卷 / 01期

关键词：

spin transfer; MTJ; MRAM;

D O I：

10.1016/j.jmmm.2006.04.016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spin-transfer driven switching was observed in MgO based magnetic tunnelling junctions (MTJ) with tunnelling magneto resistance ratio of up to 160% and the average intrinsic switching current density (J(c0)) down to 2 MA/cm(2), which are the best known results reported in spin-transfer switched MTJ nanostructures. Based on a comparison of results both from MgO and AlOx MTJs, further switching current decrease via MgO dual structures with two pinned layers is discussed. (C) 2006 Elsevier B.V. All rights reserved.

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收藏

页码：88 / 92

页数：5

相关论文

共 27 条

[1] Spin-polarized current switching of a Co thin film nanomagnet [J].

Albert, FJ ;

Katine, JA ;

Buhrman, RA ;

Ralph, DC .

APPLIED PHYSICS LETTERS, 2000, 77 (23) :3809-3811

[2] Spin-torque switching: Fokker-Planck rate calculation [J].

Apalkov, DM ;

Visscher, PB .

PHYSICAL REVIEW B, 2005, 72 (18)

[3] Multilayer configuration for experiments of spin precession induced by a dc current [J].

Berger, L .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) :7693-7695

[4] Emission of spin waves by a magnetic multilayer traversed by a current [J].

Berger, L .

PHYSICAL REVIEW B, 1996, 54 (13) :9353-9358

[5] Spin-dependent tunneling conductance of Fe|MgO|Fe sandwiches -: art. no. 054416 [J].

Butler, WH ;

Zhang, XG ;

Schulthess, TC ;

MacLaren, JM .

PHYSICAL REVIEW B, 2001, 63 (05)

[6] Switching by point-contact spin injection in a continuous film [J].

Chen, TY ;

Ji, Y ;

Chien, CL .

APPLIED PHYSICS LETTERS, 2004, 84 (03) :380-382

[7] Spin momentum transfer in current perpendicular to the plane spin valves [J].

Covington, M ;

Rebei, A ;

Parker, GJ ;

Seigler, MA .

APPLIED PHYSICS LETTERS, 2004, 84 (16) :3103-3105

[8] Spin transfer switching and spin polarization in magnetic tunnel junctions with MgO and AlOx barriers -: art. no. 232502 [J].

Diao, Z ;

Apalkov, D ;

Pakala, M ;

Ding, YF ;

Panchula, A ;

Huai, YM .

APPLIED PHYSICS LETTERS, 2005, 87 (23) :1-3

[9] 230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions [J].

Djayaprawira, DD ;

Tsunekawa, K ;

Nagai, M ;

Maehara, H ;

Yamagata, S ;

Watanabe, N ;

Yuasa, S ;

Suzuki, Y ;

Ando, K .

APPLIED PHYSICS LETTERS, 2005, 86 (09) :1-3

[10] Spin-transfer effects in nanoscale magnetic tunnel junctions [J].

Fuchs, GD ;

Emley, NC ;

Krivorotov, IN ;

Braganca, PM ;

Ryan, EM ;

Kiselev, SI ;

Sankey, JC ;

Ralph, DC ;

Buhrman, RA ;

Katine, JA .

APPLIED PHYSICS LETTERS, 2004, 85 (07) :1205-1207