Recent Advances and Future Prospects in Functional-Oxide Nanoelectronics: The Emerging Materials and Novel Functionalities that are Accelerating Semiconductor Device Research and Development

被引：35

作者：

Akinaga, Hiroyuki ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Innovat Ctr Adv Nanodevices, Tsukuba, Ibaraki 3058569, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 10期

基金：

日本科学技术振兴机构;

关键词：

INSULATOR-TRANSITION; HIGH-SPEED; LOW-POWER; RESISTANCE; MEMORY; RERAM; NANOFILAMENTS;

D O I：

10.7567/JJAP.52.100001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanoelectronics is a fundamental technology that supports industry and society. Recently, new nanomaterials and nanostructures have been incorporated into device fabrication processes, leading to significant developments in nanoelectronics. In this review, the current status and future prospects of the research and development of functional oxide devices, in which a phase transition in strongly correlated electron systems and a current-induced redox reaction are utilized, are discussed as typical examples of recent developments. In addition, a scheme for research and development is proposed to accelerate the development of ecosystem in the field of nanoelectronics by systematizing the technologies related to new materials and structures. (C) 2013 The Japan Society of Applied Physics

引用

页数：12

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