New Analytical Model for Short-Channel Fully Depleted Dual-Material Gate Silicon-on-Insulator Metal Semiconductor Field-Effect Transistor

被引：2
|
作者：
Chiang, Te-Kuang [1 ]
机构：
[1] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung 811, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 12期
关键词：
subthreshold behavior; subthreshold current; threshold voltage; subthreshold swing;
D O I：
10.1143/JJAP.47.8743
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
On the bassi of the exact solution of the two-dimensional Poisson equation, a new analytical model consisting of two-dimensional potential, threshold voltage, Subthreshold Current, and subthreshold swing for a short-channel fully depleted dual-material gate silicon-on-insulator (SOI) metal semiconductor field-effect transistor (MESFET) is developed. The model is verified by its good agreement with the numerical simulation of the device simulator. The model not only offers physical insight into the device physics but also provides an efficient device model for the Circuit Simulation. [DOI: 10.1143/JJAP.47.8743]
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页码：8743 / 8748
页数：6
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