Electrical properties of Si/Si interfaces by using surface-activated bonding

被引：54

作者：

Liang, J. ^{[1
]}

Miyazaki, T. ^{[1
]}

Morimoto, M. ^{[1
]}

Nishida, S. ^{[1
]}

Shigekawa, N. ^{[1
]}

机构：

[1] Osaka City Univ, Dept Elect Engn, Sumiyoshi Ku, Osaka 5588585, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 18期

基金：

日本科学技术振兴机构;

关键词：

SILICON-WAFERS; GAAS; SI; HETEROJUNCTIONS; JUNCTIONS; MOBILITY; CHARGE; INP; GAN;

D O I：

10.1063/1.4829676

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical properties of n-Si/n-Si, p-Si/n-Si, and p(-)-Si/n(+)-Si junctions fabricated by using surface-activated-bonding are investigated. The transmission electron microscopy/energy dispersive X-ray spectroscopy of the n-Si/n-Si interfaces reveals no evidence of oxide layers at the interfaces. From the current-voltage ( I-V) and the capacitance-voltage ( C-V) characteristics of the p-Si/n-Si and p(-)-Si/n(+)-Si junctions, it is found that the interface states, likely to have formed due to the surface activation process using Ar plasma, have a more marked impact on the electrical properties of the p-Si/n-Si junctions. An analysis of the temperature dependence of the I-V characteristics indicates that the properties of carrier transport across the bonding interfaces for reverse-bias voltages in the p-Si/n-Si and p(-)-Si/n(+)-Si junctions can be explained using the trap-assisted-tunneling and Frenkel-Poole models, respectively. (c) 2013 AIP Publishing LLC.

引用

页数：6

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