Physical and electrical properties of ultra-thin nickel silicide Schottky diodes on Si (100)

被引：6

作者：

Tamura, Y. ^{[1
]}

Yoshihara, R. ^{[1
]}

Kakushima, K. ^{[2
]}

Nohira, H. ^{[3
]}

Nakatsuka, O. ^{[4
]}

Ahmet, P. ^{[1
]}

Kataoka, Y. ^{[2
]}

Nishiyama, A. ^{[2
]}

Sugii, N. ^{[2
]}

Tsutsui, K. ^{[2
]}

Natori, K. ^{[1
]}

Hattori, T. ^{[1
]}

Iwai, H. ^{[1
]}

机构：

[1] Tokyo Inst Technol, Frontier Res Ctr, Yokohama, Kanagawa 2268502, Japan

[2] Interdisciplinary Grad Sch Sci & Engn, Tokyo Inst Technol, Yokohama, Kanagawa 2268502, Japan

[3] Tokyo City Univ, Tokyo, Japan

[4] Nagoya Univ, Nagoya, Aichi 4638603, Japan

来源：

15TH INTERNATIONAL CONFERENCE ON THIN FILMS (ICTF-15) | 2013年 / 417卷

关键词：

SYSTEMS; FILMS; NISI;

D O I：

10.1088/1742-6596/417/1/012015

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The physical and electrical properties of Ni silicides, reactively formed by a thin Ni layer of 3 nm, have been investigated. The existence of NiSi2 phase has been confirmed at low temperature annealing by x-ray photoelectron spectroscopy. The silicides have shown flat surfaces up to an annealing temperature of 800 degrees C and a stable sheet resistance can be achieved. The Schottky barrier heights extracted from diode characteristics have shown stable values against annealing temperature owing to the stability of the film with an ideality factor nearly to unit.

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页数：4

相关论文

共 11 条

[1]

Chen L.J., 2004, SILICIDE TECHNOLOGY

[2] Phase formation and thermal stability of ultrathin nickel-silicides on Si(100) [J].

De Keyser, K. ;

Van Bockstael, C. ;

Van Meirhaeghe, R. L. ;

Detavernier, C. ;

Verleysen, E. ;

Bender, H. ;

Vandervorst, W. ;

Jordan-Sweet, J. ;

Lavoie, C. .

APPLIED PHYSICS LETTERS, 2010, 96 (17)

[3] CHEMICAL BONDING AND CHARGE REDISTRIBUTION - VALENCE BAND AND CORE LEVEL CORRELATIONS FOR THE NI/SI, PD/SI, AND PT/SI SYSTEMS [J].

GRUNTHANER, PJ ;

GRUNTHANER, FJ ;

MADHUKAR, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :680-683

[4] NiSi salicide technology for scaled CMOS [J].

Iwai, H ;

Ohguro, T ;

Ohmi, S .

MICROELECTRONIC ENGINEERING, 2002, 60 (1-2) :157-169

[5] High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems [J].

Kobayashi, K ;

Yabashi, M ;

Takata, Y ;

Tokushima, T ;

Shin, S ;

Tamasaku, K ;

Miwa, D ;

Ishikawa, T ;

Nohira, H ;

Hattori, T ;

Sugita, Y ;

Nakatsuka, O ;

Sakai, A ;

Zaima, S .

APPLIED PHYSICS LETTERS, 2003, 83 (05) :1005-1007

[6] Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films [J].

Lavoie, C. ;

Detavernier, C. ;

Cabral, C., Jr. ;

d'Heurle, F. M. ;

Kellock, A. J. ;

Jordan-Sweet, J. ;

Harper, J. M. E. .

MICROELECTRONIC ENGINEERING, 2006, 83 (11-12) :2042-2054

[7] Dependence of electrical characteristics on interfacial structure of epitaxial NiSi2/Si schottky contacts formed from Ni/Ti/Si system [J].

Nakatsuka, Osamu ;

Suzuki, Atsushi ;

Akimoto, Shingo ;

Sakai, Akira ;

Ogawa, Masaki ;

Zaima, Shigeaki .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) :2402-2406

[8] MODELING OF AGGLOMERATION IN POLYCRYSTALLINE THIN-FILMS - APPLICATION TO TISI2 ON A SILICON SUBSTRATE [J].

NOLAN, TP ;

SINCLAIR, R ;

BEYERS, R .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (02) :720-724

[9] Diamond growth on polycrystalline nickel silicides [J].

Rey, S ;

Hommet, J ;

Schmerber, G ;

Le Normand, F .

JOURNAL OF CRYSTAL GROWTH, 2000, 216 (1-4) :225-234

[10] Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2 [J].

Tsutsui, Kazuo ;

Xiang, Ruifei ;

Nagahiro, Koji ;

Shiozawa, Takashi ;

Ahmet, Parhat ;

Okuno, Yasutoshi ;

Matsumoto, Michikazu ;

Kubota, Masafumi ;

Kakushima, Kuniyuki ;

Iwai, Hiroshi .

MICROELECTRONIC ENGINEERING, 2008, 85 (02) :315-319