A 2.4-5.4-GHz Wide Tuning-Range CMOS Reconfigurable Low-Noise Amplifier

被引：39

作者：

Fu, Chang-Tsung ^{[1
]}

Ko, Chun-Lin ^{[1
,2
]}

Kuo, Chien-Nan ^{[1
]}

Juang, Ying-Zong ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chip Implementat Ctr, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2008年 / 56卷 / 12期

关键词：

Dual reactive feedback; low-noise amplifier (LNA); multistandard; reconfigurable; switching inductor;

D O I：

10.1109/TMTT.2008.2006804

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 2.4-5.4-GHz CMOS reconfigurable low-noise amplifier (LNA) is designed. It consists of two stages: a broadband input stage for a steady input matching and noise performance, and a reconfigurable band-selective stage which provides a wide-range frequency tuning from 2.4 to 5.4 GHz and a 12-dB stepped gain with linearity adjustment. The frequency tuning is conducted by a multitapped switching inductor and varactors. Careful design of the switching inductor achieves consistent performance among frequency configurations. The stepped gain and linearity adjustment are provided by a size-switchable transistor with a variable biasing. Fabricated in 0.13 mu m CMOS technology this LNA exhibits performance including up to 25 dB power gain, 2.2-3.1 dB noise figure and less than 5 mW power consumption under 1 V power supply.

引用

页码：2754 / 2763

页数：10

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