Ultrathin Silicon-on-Insulator Grating Couplers

被引:29
|
作者
He, Li [1 ,2 ]
He, Yanling
Pomerene, Andrew [3 ]
Hill, Craig [3 ]
Ocheltree, Stewart [3 ]
Baehr-Jones, Tom [1 ]
Hochberg, Michael [1 ,4 ]
机构
[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA
[2] Univ Washington, Dept Elect Engn, Seattle, WA 98105 USA
[3] BAE Syst, Semicond Technol Ctr, Manassas, VA 20110 USA
[4] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119077, Singapore
关键词
Grating coupler; silicon photonics; ultrathin silicon waveguide;
D O I
10.1109/LPT.2012.2225830
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate a novel grating coupler fabricated on a silicon-on-insulator (SOI) wafer operating at 1550 nm, based on an ultrathin 50-nm silicon geometry. The devices are fabricated in a CMOS-compatible process with a single etch step. A low insertion loss of -3.7 dB is achieved. We also calculate the backreflection loss to be -14 dB. The devices are likely to be useful in terms of light coupling between optical fibers and ultrathin silicon waveguides.
引用
收藏
页码:2247 / 2249
页数:3
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