Ultrathin Silicon-on-Insulator Grating Couplers

被引：29

作者：

He, Li ^{[1
,2
]}

He, Yanling

Pomerene, Andrew ^{[3
]}

Hill, Craig ^{[3
]}

Ocheltree, Stewart ^{[3
]}

Baehr-Jones, Tom ^{[1
]}

Hochberg, Michael ^{[1
,4
]}

机构：

[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA

[2] Univ Washington, Dept Elect Engn, Seattle, WA 98105 USA

[3] BAE Syst, Semicond Technol Ctr, Manassas, VA 20110 USA

[4] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119077, Singapore

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2012年 / 24卷 / 24期

关键词：

Grating coupler; silicon photonics; ultrathin silicon waveguide;

D O I：

10.1109/LPT.2012.2225830

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a novel grating coupler fabricated on a silicon-on-insulator (SOI) wafer operating at 1550 nm, based on an ultrathin 50-nm silicon geometry. The devices are fabricated in a CMOS-compatible process with a single etch step. A low insertion loss of -3.7 dB is achieved. We also calculate the backreflection loss to be -14 dB. The devices are likely to be useful in terms of light coupling between optical fibers and ultrathin silicon waveguides.

引用

页码：2247 / 2249

页数：3

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