Crystal Growth, Structural and Optical Characterization of the Ordered Vacancy Compounds of the I-III3-VI5 and I-III5-VI8 Families

被引：24

作者：

Marin, Giovanni ^{[1
]}

Marquez, Rigoberto ^{[1
]}

Guevaraba, Rafael ^{[2
]}

Wasim, Syed M. ^{[1
]}

Delgado, Jose M. ^{[2
]}

Rincon, Carlos ^{[1
]}

Sanchez Perez, Gerardo ^{[1
]}

Molina, Idelfonzo ^{[1
]}

Bocaranda, Pablo ^{[1
]}

机构：

[1] Univ Los Andes, Fac Ciencias, Ctr Estudios Semicond, Merida 5101, Venezuela

[2] Univ Los Andes, Fac Ciencias, Ctr Nacl Difracc Rayos X, Merida 5101, Venezuela

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2000年 / 39卷 / 01期

关键词：

Ordered vacancy compound; optical absorption; crystal structure; energy gap;

D O I：

10.7567/JJAPS.39S1.44

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comparative study of the crystal structure and band gap of the 1:1:2, 1:3:5, and 1:5:8 phases of Cu-In-Se, Cu-Ga-Se, Cu-In-Te, and Cu-Ga-Te ternary systems has been made. Attempt is made to explain the observed change in the band gap of these systems due to the shift of the conduction band minimum and valence band maximum caused by the p-d interband repulsion originating from the (IIIcu2+ + 2 V-cu(-)) defect pair.

引用

页码：44 / 45

页数：2

共 5 条

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Zhang, SB
Wei, SH
Zunger, A
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[J]. PHYSICAL REVIEW B, 1998, 57 (16): : 9642 - 9656

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