The influence of grain boundary impedances on the p-type conductivity of undoped BaTiO3 ceramics

被引:27
|
作者
Clark, IJ
Marques, FB
Sinclair, DC
机构
[1] Univ Sheffield, Dept Mat Engn, Sheffield S1 3JD, S Yorkshire, England
[2] Univ Aveiro, UIMC, Dept Ceram & Glass Engn, P-3810 Aveiro, Portugal
基金
英国工程与自然科学研究理事会;
关键词
BaTiO3; electrical conductivity; electrical properties; grain boundaries; impedance spectroscopy;
D O I
10.1016/S0955-2219(01)00314-4
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Impedance spectroscopy is used to deconvolute the dc conductivity (sigma) of undoped BaTiO3 ceramics (similar to 95% of the theoretical Xray density) into bulk (sigma(b)) and grain boundary (sigma(gb)) components at two oxygen partial pressures, P-O2 similar to 10 Pa (N-2) and similar to0.21 MPa (air). At 900degreesC, sigmasimilar tosigma(b) in both atmospheres, however, at lower temperatures Z* plots are dominated by the grain boundary component and sigmasimilar tosigma(gb). The temperature of the switch from sigmasimilar tosigma(b) to sigmasimilar tosigma(gb) is different in the two atmospheres and occurs at similar to850degreesC in air and similar to650degreesC in N-2. Isothermal plots of log sigma(b) VS log P-O2 in the temperature range 450-900degreesC show the expected oxygen partial pressure dependence with a gradient of + 1/4. In contrast, sigma(gb) is relatively insensitive to P-O2 and log sigma(gb) VS log P-O2 plots have gradients < + 1/4 with values as low as similar to + 1/14.0. In general, isothermal log sigma vs log pO(2) plots have gradients < + 1/4 as sigma is dominated by the grain boundary component. This may explain the wide range of gradients (similar to 1/4-1/9) reported in the literature for isothermal dc conductivity measurements on polycrystalline BaTiO3 in the p-type regime. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:579 / 583
页数:5
相关论文
共 50 条
  • [1] Enhancement of p-type conductivity, in nanocrystalline BaTiO3 ceramics -: art. no. 082110
    Guo, X
    Pithan, C
    Ohly, C
    Jia, CL
    Dornseiffer, J
    Haegel, FH
    Waser, R
    APPLIED PHYSICS LETTERS, 2005, 86 (08) : 1 - 3
  • [2] P-Type Partial Conductivity of Donor(La)-Doped BaTiO3
    Han-Ill Yoo
    Sang-Woo Lee
    Chung-Eun Lee
    Journal of Electroceramics, 2003, 10 : 215 - 219
  • [3] P-type partial conductivity of donor(La)-doped BaTiO3
    Yoo, HI
    Lee, SW
    Lee, CE
    JOURNAL OF ELECTROCERAMICS, 2003, 10 (03) : 215 - 219
  • [4] LAYER STRUCTURES BAO-BATIO3 IN THE REGION OF P-TYPE CONDUCTIVITY ON THE SURFACE OF BATIO3
    SZOT, K
    FREIBURG, C
    PAWELCZYK, M
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (06): : 563 - 567
  • [5] Impedance spectroscopy of undoped BaTiO3 ceramics
    Hirose, N
    West, AR
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1996, 79 (06) : 1633 - 1641
  • [6] Impedance spectroscopy of undoped BaTiO3 ceramics
    Univ of Aberdeen, Aberdeen, United Kingdom
    J Am Ceram Soc, 6 (1633-1641):
  • [7] Measurement of grain boundary potential in undoped and Ho-doped BaTiO3
    Woonbumroong, A
    Boothroyd, CB
    ELECTRON MICROSCOPY 1998, VOL 2: MATERIALS SCIENCE 1, 1998, : 663 - 664
  • [8] The influence of doping style on the grain growth of BaTiO3 ceramics
    Qi, JQ
    Li, LT
    Li, W
    Wang, YL
    Gui, ZL
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 99 (1-3): : 214 - 216
  • [9] THERMAL CONDUCTIVITY OF BATIO3 CERAMICS
    YOSHIDA, I
    NOMURA, S
    SAWADA, S
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1958, 13 (12) : 1550 - 1551
  • [10] MODEL FOR GRAIN-BOUNDARY RESISTANCE IN DOPED BATIO3 CERAMICS
    HOFFMANN, B
    SOLID-STATE ELECTRONICS, 1973, 16 (05) : 623 - 628