1mA-threshold operation of 1.3 mu m tensile-strained GaInAsP/InP MQW lasers

被引：0

作者：

Yokouchi, N ^{[1
]}

Yamanaka, N ^{[1
]}

Iwai, N ^{[1
]}

Kasukawa, A ^{[1
]}

机构：

[1] FURUKAWA ELECT CORP LTD,YOKOHAMA R&D LABS,NISHI KU,YOKOHAMA,KANAGAWA 220,JAPAN

来源：

1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS | 1996年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：388 / 391

页数：4

共 50 条

[41] 1.3-mu m GaInAsP/InP multi-quantum-well surface-emitting lasers
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[48] HIGH-PERFORMANCE STRAINED MQW LASERS AT 1.3-MU-M BY MOVPE USING ARSINE GENERATOR SYSTEM
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[49] 1.3-MU-M WAVELENGTH GAINASP INP DOUBLE HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
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