Microstructure Modeling for Prediction of Thermal Conductivity of Plain Weave C/SiC Composites Considering Manufacturing Flaws

被引:4
作者
Li, Shengshan [1 ]
Tong, Xiaoyan [1 ]
Yao, Leijiang [1 ]
Li, Bin [1 ]
机构
[1] Northwestern Polytech Univ, Sci & Technol UVA Lab, Xian 710065, Peoples R China
来源
ADVANCED MATERIALS AND ITS APPLICATION | 2012年 / 460卷
关键词
microstructure modeling; SEM; thermal conductivity; C/SiC; RVE;
D O I
10.4028/www.scientific.net/AMR.460.342
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Utilized photomicrographs taken by scanning electron microscope (SEM), an accurate representative volume element (RVE) model for plain weave C/SiC composites is established. Based on the steady-analysis method, the in-plane and thickness direction thermal conductivity of the C/SiC composites are calculated as 25.6Wm(-1)K(-1) and 12.1Wm(-1)K(-1), respectively. The manufacturing flaws have different effect on thermal conductivity. Compared with RVE without flaws, the result shows that matrix cracks make thermal conductivity decrease by 7.2% in the in-plane direction and have little effect in the thickness direction; matrix porosities have a significant effect on thermal conductivity, which make the thermal conductivity decrease by 16.7% in the in-plane direction and decrease by 25.4% in the thickness direction. The variation law of thermal conductivity along with porosity volume is also observed: as matrix porosity volume fraction is increasing, the thermal conductivity of material shows significant decrease.
引用
收藏
页码:342 / 346
页数:5
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