Ferroelectric domain wall pinning at a bicrystal grain boundary in bismuth ferrite

被引:64
|
作者
Rodriguez, Brian J.
Chu, Y. H. [2 ]
Ramesh, R. [3 ]
Kalinin, Sergei V. [1 ]
机构
[1] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan
[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
关键词
D O I
10.1063/1.2993327
中图分类号
O59 [应用物理学];
学科分类号
摘要
The ferroelectric polarization switching behavior at the 24 degrees (100) tilt grain boundary (GB) in an epitaxial multiferroic BiFeO3 bicrystal film is studied using piezoresponse force microscopy (PFM). The PFM amplitudes across positively and negatively poled GB regions suggest the presence of a frozen polarization component at the interface. The switching experiments demonstrate that the GB attracts the domain wall and acts as a pinning center. The PFM results are compared with conductive atomic force microscopy and spectroscopy, which suggest domain wall pinning at the GB can be partially attributed to increased conductance at the GB. (C) 2008 American Institute of Physics.
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页数:3
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