Electronic structure calculations on MoTe2 with rotated planes

被引:1
作者
Tlahuice, A
Flores, E
Galván, DH
机构
[1] Univ Nacl Autonoma Mexico, CCMC, Ensenada 22800, Baja California, Mexico
[2] CICESE, Ensenada 22800, Baja California, Mexico
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2005年 / 19卷 / 26期
关键词
chalcogenides; electronic structure; electrical properties;
D O I
10.1142/S0217979205032565
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electronic structure calculations have been carried out using Extended Huckel tight-binding method for 2H-MoTe2 for the cases both unrotated and with rotated planes. It has been found that relative rotations of the tellurium layers ranging from 5 to 16 degrees have the same total energies and total energies/atom as the unrotated structure. Moreover, an increased in metallic behavior has been observed, as long as the degrees of rotated planes are increased. Finally, good agreement has been found among previous experimental measurements in the diffraction pattern of irradiated MoTe2 and our calculated 5, 6 and 7 degrees of rotations.
引用
收藏
页码:3933 / 3943
页数:11
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