Thermoelectric properties of Cr1-xMoxSi2

被引：16
作者：
Ohishi, Yuji [1 ]
Mohamad, Afiqa [1 ]
Miyazaki, Yoshinobu [1 ,2 ]
Muta, Hiroaki [1 ]
Kurosaki, Ken [1 ]
Yamanaka, Shinsuke [1 ,3 ]
机构：
[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan
[2] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058562, Japan
[3] Univ Fukui, Res Inst Nucl Engn, Tsuruga, Fukui 9140055, Japan
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2015年 / 87卷
基金：
日本科学技术振兴机构;
关键词：
Semiconductor; Intermetallic compounds; Thermal conductivity; Electrical properties; TRANSPORT PERFORMANCES; THERMAL-CONDUCTIVITY; CHROMIUM; CONSTANTS; STABILITY;
D O I：
10.1016/j.jpcs.2015.08.017
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The thermoelectric properties of Mo-substituted CrSi2 were studied. Dense polycrystalline samples of Mo-substituted hexagonal C40 phase Cr1-xMoxSi2 (x=0-030) were fabricated by arc melting followed by spark plasma sintering. Mo substitution substantially increases the carrier concentration. The lattice thermal conductivity of CrSi2 at room temperature was reduced from 9.0 to 4.5W m(-1) K-1 by Mo substitution due to enhanced phonon-impurity scattering. The thermoelectric figure of merit, ZT, increases with increasing Mo content because of the reduced lattice thermal conductivity. The maximum ZT value obtained in the present study was 0.23 at 800 K, which was observed for the sample with x=0.30. This value is significantly greater than that of undoped CrSi2 (ZT=0.13). (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：153 / 157
页数：5
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