Analysis of Novel MagFET Structures for Built-in Current Sensors Supported by 3D Modeling and Simulation

被引：3

作者：

Marek, Juraj ^{[1
]}

Donoval, Daniel ^{[1
]}

Donoval, Martin ^{[1
]}

Daricek, Martin ^{[1
]}

机构：

[1] Slovak Tech Univ, Dept Microelect, Bratislava 81219, Slovakia

来源：

ASDAM 2008, CONFERENCE PROCEEDINGS | 2008年

关键词：

D O I：

10.1109/ASDAM.2008.4743347

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Novel built-in current sensor structures based on selected electrophysical properties of a magnetic FET (MAGFET) is presented The proposed sensor structures may be used for on-chip current testing in deep-submicron circuits with ultra low-voltage power supply. Their advantage is mainly in elimination of the undesired supply voltage reduction on the current monitor, commonly created by standard current test methods. Analysis of the influence of various device structures and dimensions on their electro-physical parameters and electrical characteristics is presented. All versions of MAGFET structure were designed using design rules of 1 mu m BiCMOS technology.

引用

页码：315 / 318

页数：4