Correlation between defects and conductivity of Sb-doped tin oxide thin films

被引：34

作者：

Mao, Wenfeng ^{[1
]}

Xiong, Bangyun ^{[1
]}

Liu, Yong ^{[1
]}

He, Chunqing ^{[1
]}

机构：

[1] Wuhan Univ, Sch Phys & Technol, Key Lab Nucl Solid State Phys Hubei Prov, Wuhan 430072, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 03期

基金：

高等学校博士学科点专项科研基金; 中国国家自然科学基金;

关键词：

ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; SNO2; TRANSPARENT; TRANSPORT;

D O I：

10.1063/1.4816084

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Defects in undoped and antimony (Sb)-doped tin oxide thin films fabricated via a sol-gel method have been investigated using a slow positron beam by which an annihilation lineshape parameter is used to evaluate defects in the films. With increasing calcination temperature, the resistivity for undoped films increased because of removal of oxygen vacancies in them; however, the resistivity gradually declined for Sb-doped films upon annealing at higher temperatures, mainly due to weakened carrier scattering with fewer residual defects. The results show that defects as well as dopants play an important role in determining the resistivity of tin oxide films. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 50 条

[41] Improving the optoelectronic properties of titanium-doped indium tin oxide thin films [J].

Taha, Hatem ;

Jiang, Zhong-Tao ;

Henry, David J. ;

Amri, Amun ;

Yin, Chun-Yang ;

Rahman, M. Mahbubur .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 32 (06)

[42] Structural differences between Sb- and Nb-doped tin oxides and consequences for electrical conductivity [J].

Oakton, Emma ;

Tillier, Jeremy ;

Siddiqi, Georges ;

Mickovic, Zlatko ;

Sereda, Olha ;

Fedorov, Alexey ;

Coperet, Christophe .

NEW JOURNAL OF CHEMISTRY, 2016, 40 (03) :2655-2660

[43] Surface and bulk properties of sputter deposited undoped and Sb-doped SnO2 thin films [J].

Koerber, Christoph ;

Agoston, Peter ;

Klein, Andreas .

SENSORS AND ACTUATORS B-CHEMICAL, 2009, 139 (02) :665-672

[44] Effect of intermittent time on structural, optoelectronic, luminescence properties of sprayed antimony doped tin oxide thin films [J].

Babar, A. R. ;

Rajpure, K. Y. .

JOURNAL OF ANALYTICAL AND APPLIED PYROLYSIS, 2015, 112 :214-220

[45] Magnetic properties of (Ni, Co)-doped tin oxide thin films [J].

Ribeiro, Yuri Hamayano Lopes ;

Sampaio, Jime de Souza ;

Santos, Vagner Oliveira ;

David, Denis Gilbert Francis ;

da Silva, Marcus Vinicius Santos ;

da Silva, Vagner Tenilson Souza ;

dos Santos, Tercio Neres ;

de Almeida, Jailton Souza .

THIN SOLID FILMS, 2025, 819

[46] Properties of Sb-doped SnO2 transparent conductive thin films deposited by radio-frequency magnetron sputtering [J].

Yang, Wenhao ;

Yu, Shihui ;

Zhang, Yang ;

Zhang, Weifeng .

THIN SOLID FILMS, 2013, 542 :285-288

[47] Conductivity and transparency limits of Sb-doped SnO2 grown by molecular beam epitaxy [J].

Martinez-Gazoni, R. F. ;

Allen, M. W. ;

Reeves, R. J. .

PHYSICAL REVIEW B, 2018, 98 (15)

[48] Correlation between Material Properties, Crystalline Transitions, and Point Defects in RF Sputtered (N,Mg)-Doped Copper Oxide Thin Films [J].

Ratz, Thomas ;

Fourneau, Emile ;

Sliti, Naama ;

Malherbe, Cedric ;

Baret, Amaury ;

Vertruyen, Benedicte ;

Silhanek, Alejandro V. ;

Nguyen, Ngoc Duy .

ACS APPLIED ELECTRONIC MATERIALS, 2025, 7 (02) :643-651

[49] Texture control of fluorine-doped tin oxide thin film [J].

Kim, Chang-Yeoul ;

Riu, Doh-Hyung .

THIN SOLID FILMS, 2011, 519 (10) :3081-3085

[50] Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity [J].

Kaushik, Deepak Kumar ;

Kumar, K. Uday ;

Subrahmanyam, A. .

AIP ADVANCES, 2017, 7 (01)

← 1 2 3 4 5 →