Correlation between defects and conductivity of Sb-doped tin oxide thin films

被引：34

作者：

Mao, Wenfeng ^{[1
]}

Xiong, Bangyun ^{[1
]}

Liu, Yong ^{[1
]}

He, Chunqing ^{[1
]}

机构：

[1] Wuhan Univ, Sch Phys & Technol, Key Lab Nucl Solid State Phys Hubei Prov, Wuhan 430072, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 03期

基金：

高等学校博士学科点专项科研基金; 中国国家自然科学基金;

关键词：

ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; SNO2; TRANSPARENT; TRANSPORT;

D O I：

10.1063/1.4816084

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Defects in undoped and antimony (Sb)-doped tin oxide thin films fabricated via a sol-gel method have been investigated using a slow positron beam by which an annihilation lineshape parameter is used to evaluate defects in the films. With increasing calcination temperature, the resistivity for undoped films increased because of removal of oxygen vacancies in them; however, the resistivity gradually declined for Sb-doped films upon annealing at higher temperatures, mainly due to weakened carrier scattering with fewer residual defects. The results show that defects as well as dopants play an important role in determining the resistivity of tin oxide films. (C) 2013 AIP Publishing LLC.

引用

页数：4

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