Reversible charge storage in a single silicon atom

被引：32

作者：

Bellec, Amandine ^{[1
,2
]}

Chaput, Laurent ^{[3
,4
]}

Dujardin, Gerald ^{[1
]}

Riedel, Damien ^{[1
]}

Stauffer, Louise ^{[3
]}

Sonnet, Philippe ^{[3
]}

机构：

[1] Univ Paris 11, CNRS, UMR 8214, ISMO, F-91405 Orsay, France

[2] Univ Paris 07, Lab Mat & Phenomenes Quant, Sorbonne Paris Cite, CNRS,UMR 7162, F-75205 Paris 13, France

[3] Univ Haute Alsace, IS2M, CNRS, UMR 7361, F-68093 Mulhouse, France

[4] Nancy Univ, Inst Jean Lamour, CNRS, UMR 7198, F-54506 Vandoeuvre Les Nancy, France

来源：

PHYSICAL REVIEW B | 2013年 / 88卷 / 24期

关键词：

DANGLING BONDS; SEMICONDUCTOR; TRANSISTOR; SURFACE; SI(001); TIP;

D O I：

10.1103/PhysRevB.88.241406

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The ultimate miniaturization of electronic devices at the atomic scale with single electrons requires controlling the reversible charge storage in a single atom. However, reversible charge storage is difficult to control as usually only one charge state can be stabilized. Here, combining scanning tunneling microscopy (STM) and density functional theory (DFT), we demonstrate that a single silicon dangling bond of a hydrogenated p-type doped Si(100) surface has two stable charge states (neutral and negatively charged) at low temperature (5 K). Reversible charge storage is achieved using a gate electric field between the STM tip and the surface.

引用

页数：5

共 31 条

[1] Nonlocal Activation of a Bistable Atom through a Surface State Charge-Transfer Process on Si(100)-(2 x 1):H [J].