Dielectric and piezoelectric properties of the Ba0.92Ca0.08Ti0.95Zr0.05O3 thin films grown on different substrate

被引：22
作者：
Li, Wei [1 ,2 ]
Hao, Jigong [1 ]
Zeng, Huarong [3 ]
Zhai, Jiwei [1 ]
机构：
[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
[2] Liaocheng Univ, Coll Mat Sci & Engn, Liaocheng 252059, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
来源：
CURRENT APPLIED PHYSICS | 2013年 / 13卷 / 07期
基金：
中国国家自然科学基金; 高等学校博士学科点专项科研基金;
关键词：
Sol-gel; Orientation; Dielectric properties; Piezoelectric properties; ELECTRICAL-PROPERTIES; D(33) COEFFICIENT; CERAMICS;
D O I：
10.1016/j.cap.2013.03.015
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Lead free Ba0.92Ca0.08Ti0.95Zr0.05O3 (BCZT) thin films were deposited on Pt/Ti/SiO2/Si and LaNiO3(LNO)/Pt/Ti/SiO2/Si substrates by a sol-gel processing technique, respectively. The effects of substrate on structure, dielectric and piezoelectric properties were investigated in detail. The BCZT thin films deposited on LNO/Pt/Ti/SiO2/Si substrates exhibit (100) orientation, larger grain size and higher dielectric tunability (64%). The BCZT thin films deposited on Pt/Ti/SiO2/Si exhibit (110) orientation, higher Curie temperature (75 degrees C), better piezoelectric property (d(33) of 50 pm/V) and lower dielectric loss (0.02). The differences in dielectric and piezoelectric properties in the two kinds of oriented BCZT films should be attributed to the difference of structure, in-plane stress and polarization rotation in orientation engineered BCZT films. (c) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：1205 / 1208
页数：4
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